Antimony(III) Telluride (Sb2Te3) CAS 1327-50-0: Comprehensive Guide
Table of Contents
1. Product Specifications & Comparative Analysis
| Parameter | Sb2Te3 (Industrial Grade) | Sb2Te3 (Electronic Grade) |
|---|---|---|
| CAS Number | 1327-50-0 | |
| Purity | 99.5% | 99.999% |
| Crystal Structure | Rhombohedral | |
| Band Gap | 0.21 eV | 0.20 eV |
| Thermal Conductivity | 2.5 W/m·K | 1.8 W/m·K |
2. Industrial & Scientific Applications
2.1 Thermoelectric Materials
Sb2Te3 exhibits exceptional ZT values (1.2 at 300K), making it ideal for:
- Portable refrigeration systems
- Waste heat recovery units
- Precision temperature control devices
2.2 Phase-Change Memory (PCM)
Used in non-volatile memory devices due to:
- Fast crystallization speed (20 ns)
- Stable amorphous phase
- Endurance >109 cycles
3. Operational Guidelines
3.1 Thin-Film Deposition Protocols
| Method | Optimal Parameters |
|---|---|
| Magnetron Sputtering | Ar pressure: 0.8 Pa, Power: 150W, Substrate Temp: 200°C |
| Thermal Evaporation | Base Pressure: 5×10-4 Pa, Rate: 2Å/s |
4. Implementation Case Studies
4.1 Automotive Thermoelectric Generator
Application: Convert exhaust heat to electricity in BMW 5 Series
- Output: 650W at 550°C ΔT
- Fuel efficiency improvement: 4.2%
5. Client Success Stories
5.1 ThermoElectric Solutions Inc.
Challenge: Develop compact cooling module for laser diodes
- Solution: Graded Sb2Te3/Bi2Te3 structure
- Result: 72K temperature differential achieved
5.2 NanoPhase Technologies
Application: Phase-change random access memory (PCRAM)
- Switching speed: 18 ns
- Data retention: 10 years at 85°C
6. Request Customized Solutions
Contact our materials engineering team for:
- Custom doping configurations (Ge, Se, or S)
- Nano-structured compositions (50-200nm particles)
- Bulk crystal growth services
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